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1

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 443 KB

english, 2009

2

Cryo-Electron Microscopy: Moving Beyond X-Ray Crystal Structures for Drug Receptors and Drug Development

García-Nafría, Javier, Tate, Christopher G.

Journal:

Annual Review of Pharmacology

Year:

2020

Language:

english

File:

PDF, 6.23 MB

english, 2020

3

Fine-Tuning Mybl2 Is Required for Proper Mesenchymal-to-Epithelial Transition during Somatic Reprogramming

Ward, Carl, Volpe, Giacomo, Cauchy, Pierre, Ptasinska, Anetta, Almaghrabi, Ruba, Blakemore, Daniel, Nafria, Monica, Kestner, Doris, Frampton, Jon, Murphy, George, Buganim, Yosef, Kaji, Keisuke, García

Journal:

Year:

2018

Language:

english

File:

PDF, 4.74 MB

english, 2018

4

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs

J. Martín-Martínez, S. Gerardin, R. Rodríguez, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 634 KB

english, 2007

5

SPICE modelling of hot-carrier degradation in Si1–xGex S/D and HfSiON based pMOS transistors

J. Martin-Martinez, E. Amat, M.B. Gonzalez, P. Verheyen, R. Rodríguez, M. Nafría, X. Aymerich, E. Simoen

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 504 KB

english, 2010

6

FinFET and MOSFET preliminary comparison of gate oxide reliability

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 286 KB

english, 2006

7

Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films

R. Rodríguez, E. Miranda, M. Nafría, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 376 KB

english, 1998

8

A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction

E Miranda, J Suñé, R Rodríguez, M Nafría, X Aymerich

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 309 KB

english, 1999

9

Model-independent determination of the degradation dynamics of thin SiO2 films

R. Rodríguez, M. Nafría, E. Miranda, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 323 KB

english, 1999

10

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

V. Iglesias, M. Lanza, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, L.F. Liu, J.F. Kang, G. Bersuker, K. Zhang, Z.Y. Shen

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 894 KB

english, 2012

11

Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

Amat, E., Kauerauf, T., Degraeve, R., De Keersgieter, A., Rodriguez, R., Nafria, M., Aymerich, X., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 287 KB

english, 2009

12

RELAB: a tool to include MOSFETs variability, BTI aging and dielectric breakdown in SPICE simulators

Martin-Martinez, J., Moras, M., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

Analog Integrated Circuits and Signal Processing

Year:

2014

Language:

english

File:

PDF, 1.53 MB

english, 2014

13

New Weighted Time Lag Method for the Analysis of Random Telegraph Signals

Martin-Martinez, Javier, Diaz, Javier, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.11 MB

english, 2014

14

Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions

Moras, M., Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X., Simoen, E.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.44 MB

english, 2014

15

Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-$k$ -Based Devices

Amat, Esteve, Kauerauf, Thomas, Degraeve, Robin, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2011

Language:

english

File:

PDF, 363 KB

english, 2011

16

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

Amat, E., Rodriguez, R., Gonzalez, M.B., Martin-Martinez, J., Nafria, M., Aymerich, X., Machkaoutsan, V., Bauer, M., Verheyen, P., Simoen, E.

Year:

2010

Language:

english

File:

PDF, 338 KB

english, 2010

17

Monitoring defects in III–V materials: A nanoscale CAFM study

Iglesias, V., Wu, Q., Porti, M., Nafría, M., Bersuker, G., Cordes, A.

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 2.55 MB

english, 2015

18

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Experimental Monitoring of Aging in CMOS RF Linear Power Amplifiers: Correlation Between Device and Circuit Degradation

Rodriguez, Rosana, Crespo-Yepes, Albert, Martin-Martinez, Javier, Nafria, Montserrat, Aragones, Xavier, Mateo, Diego, Barajas, Enrique

Year:

2020

File:

PDF, 1.07 MB

2020

19

Reversible dielectric breakdown of thin gate oxides in MOS devices

J. Suñé, M. Nafría, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1993

Language:

english

File:

PDF, 493 KB

english, 1993

20

High field dynamic stress of thin SiO2 films

M. Nafría, J. Suñé, D. Yélamos, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1995

Language:

english

File:

PDF, 600 KB

english, 1995

21

Breakdown of thin gate silicon dioxide films—A review

M. Nafría, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1996

Language:

english

File:

PDF, 1.41 MB

english, 1996

22

Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale

L. Aguilera, M. Porti, M. Nafría, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 393 KB

english, 2005

23

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

J. Martín-Martínez, R. Rodríguez, M. Nafría, X. Aymerich, J.H. Stathis

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 160 KB

english, 2007

24

Influence of the manufacturing process on the electrical properties of thin (

M. Lanza, M. Porti, M. Nafria, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier, G. Jaschke

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 1.66 MB

english, 2007

25

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

A. Crespo-Yepes, J. Martin-Martinez, R. Rodriguez, M. Nafria, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 369 KB

english, 2009

26

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 493 KB

english, 2010

27

Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions

E. Amat, R. Rodríguez, M. Nafría, X. Aymerich, J.H. Stathis

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 144 KB

english, 2007

28

Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors

Polspoel, W., Vandervorst, W., Aguilera, L., Porti, M., Nafria, M., Aymerich, X.

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 627 KB

english, 2008

29

Analysis of the evolution of the trapped charge distributions in 10nm SiO2 films during DC and bipolar dynamic stress

R. Rodriguez, M. Nafria, J. Suñe, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1997

Language:

english

File:

PDF, 305 KB

english, 1997

30

Grain boundary-driven leakage path formation in HfO2 dielectrics

G. Bersuker, J. Yum, L. Vandelli, A. Padovani, L. Larcher, V. Iglesias, M. Porti, M. Nafría, K. McKenna, A. Shluger, P. Kirsch, R. Jammy

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.16 MB

english, 2011

31

Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs

A. Crespo-Yepes, J. Martin-Martinez, A. Rothschild, R. Rodriguez, M. Nafria, X. Aymerich

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 581 KB

english, 2011

32

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

Miranda, E., Sune, J., Rodriguez, R., Nafria, M., Aymerich, X., Fonseca, L., Campabadal, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 190 KB

english, 2000

33

Analysis of the degradation and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress procedure

Rodriguez, R., Nafria, M., Miranda, E., Sune, J., Aymerich, X.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 121 KB

english, 2000

34

Metal oxide resistive memory switching mechanism based on conductive filament properties

Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., Nafria, M.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 3.53 MB

english, 2011

35

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

N. Ayala, J. Martin-Martinez, R. Rodriguez, M.B. Gonzalez, M. Nafria, X. Aymerich, E. Simoen

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 403 KB

english, 2012

36

Electrical and mechanical performance of graphene sheets exposed to oxidative environments

Lanza, Mario, Wang, Yan, Gao, Teng, Bayerl, Albin, Porti, Marc, Nafria, Montserrat, Zhou, Yangbo, Jing, Guangyin, Zhang, Yanfeng, Liu, Zhongfan, Yu, Dapeng, Duan, Huiling

Journal:

Year:

2013

Language:

english

File:

PDF, 1008 KB

english, 2013

37

A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture

Martin-Martinez, J., Almudever, C.G., Crespo-Yepes, A., Rodriguez, R., Nafria, M., Rubio, A.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 2.20 MB

english, 2014

38

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Crespo-Yepes, A., Martín-Martínez, J., Rodríguez, R., Nafría, M., Aymerich, X.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.26 MB

english, 2013

39

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Bayerl, Albin, Lanza, Mario, Aguilera, Lidia, Porti, Marc, Nafría, Montserrat, Aymerich, Xavier, Gendt, Stefan de

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

40

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs

Velayudhan, V., Gamiz, F., Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

41

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Grain boundary-driven leakage path formation in HfO2 dielectrics

Bersuker, G., Yum, J., Iglesias, V., Porti, M., Nafria, M., McKenna, K., Shluger, A., Kirsch, P., Jammy, R.

Year:

2010

Language:

english

File:

PDF, 560 KB

english, 2010

42

Failure physics of ultra-thin SiO 2 gate oxides near their scaling limit

Suñé, J, Nafría, M, Miranda, E, Oriols, X, Rodríguez, R, Aymerich, X

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 158 KB

english, 2000

43

Competing Degradation Mechanisms in Short-Channel Transistors Under Channel Hot-Carrier Stress at Elevated Temperatures

Amat, E., Kauerauf, T., Degraeve, R., Rodriguez, R., Nafria, M., Aymerich, X., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 263 KB

english, 2009

44

Circuit Design-Oriented Stochastic Piecewise Modeling of the Postbreakdown Gate Current in MOSFETs: Application to Ring Oscillators

Martin-Martinez, Javier, Kaczer, Ben, Degraeve, Robin, Roussel, Philippe J., Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Dierickx, B., Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2012

Language:

english

File:

PDF, 749 KB

english, 2012

45

Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric

Crespo-Yepes, Albert, Martin-Martinez, Javier, Rothschild, Aude, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2011

Language:

english

File:

PDF, 429 KB

english, 2011

46

Time-Dependent Variability Related to BTI Effects in MOSFETs: Impact on CMOS Differential Amplifiers

Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 515 KB

english, 2009

47

Combined Nanoscale and Device-Level Degradation Analysis of $\hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices

Lanza, M., Porti, M., Nafria, M., Aymerich, X., Sebastiani, A., Ghidini, G., Vedda, A., Fasoli, M.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 726 KB

english, 2009

48

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

Bayerl, Albin, Lanza, Mario, Porti, Marc, Nafria, Montserrat, Aymerich, Xavier, Campabadal, F., Benstetter, Günther

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2011

Language:

english

File:

PDF, 738 KB

english, 2011

49

Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

Maestro, M., Martin-Martinez, J., Diaz, J., Crespo-Yepes, A., Gonzalez, M.B., Rodriguez, R., Campabadal, F., Nafria, M., Aymerich, X.

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 775 KB

english, 2015

50

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Shi, Yuanyuan, Ji, Yanfeng, Hui, Fei, Nafria, Montserrat, Porti, Marc, Bersuker, Gennadi, Lanza, Mario

Journal:

Advanced Electronic Materials

Year:

2015

Language:

english

File:

PDF, 916 KB

english, 2015